Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films

Doron Azulay, Oded Millo, Isaac Balberg, Hans Werner Schock, Iris Visoly-Fisher, David Cahen

Research output: Contribution to journalArticlepeer-review

101 Scopus citations

Abstract

Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

Original languageEnglish
Pages (from-to)85-90
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume91
Issue number1
DOIs
StatePublished - 5 Jan 2007
Externally publishedYes

Keywords

  • CIGS
  • CIS
  • Conductive AFM
  • Grain boundaries
  • Solar cell

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