Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films

Doron Azulay; Oded Millo; Isaac Balberg; Hans Werner Schock; Iris Visoly-Fisher; David Cahen

doi:10.1016/j.solmat.2006.08.006

Current routes in polycrystalline CuInSe₂ and Cu(In,Ga)Se₂ films

Doron Azulay
, Oded Millo
, Isaac Balberg
, Hans Werner Schock
, Iris Visoly-Fisher
, David Cahen

Research output: Contribution to journal › Article › peer-review

111 Scopus citations

Abstract

Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe₂ and p-Cu(In,Ga)Se₂ films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

Original language	English
Pages (from-to)	85-90
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	91
Issue number	1
DOIs	https://doi.org/10.1016/j.solmat.2006.08.006
State	Published - 5 Jan 2007
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CIGS
CIS
Conductive AFM
Grain boundaries
Solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Access to Document

10.1016/j.solmat.2006.08.006

Cite this

@article{2fc70188691945998f3976caf194869e,

title = "Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films",

abstract = "Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.",

keywords = "CIGS, CIS, Conductive AFM, Grain boundaries, Solar cell",

author = "Doron Azulay and Oded Millo and Isaac Balberg and Schock, \{Hans Werner\} and Iris Visoly-Fisher and David Cahen",

year = "2007",

month = jan,

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doi = "10.1016/j.solmat.2006.08.006",

language = "English",

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journal = "Solar Energy Materials and Solar Cells",

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T1 - Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films

AU - Azulay, Doron

AU - Millo, Oded

AU - Balberg, Isaac

AU - Schock, Hans Werner

AU - Visoly-Fisher, Iris

AU - Cahen, David

PY - 2007/1/5

Y1 - 2007/1/5

N2 - Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

AB - Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

KW - CIGS

KW - CIS

KW - Conductive AFM

KW - Grain boundaries

KW - Solar cell

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DO - 10.1016/j.solmat.2006.08.006

M3 - Article

AN - SCOPUS:33750074735

SN - 0927-0248

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JO - Solar Energy Materials and Solar Cells

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