Current transport mechanism in p-ZnO/n-6H-SiC heterojunction

M. Dutta; D. Basak

doi:10.1149/1.3608998

Current transport mechanism in p-ZnO/n-6H-SiC heterojunction

M. Dutta
, D. Basak

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

p-ZnO/n-6H-SiC heterojunction has been fabricated by depositing Al-N co-doped p-type ZnO film on n-6H-SiC by a low-cost sol-gel technique. The junction shows good diode characteristics with a rectification ratio, (I _F/I_R) of about 35 at 4 V. The conduction band offset of the heterojunction has been measured by temperature dependent current-voltage characteristics. By fitting the experimental data, the current transport mechanism is shown to be dominated by the recombination tunneling and drift diffusion at lower and by the space-charge limited current at higher bias voltages.

Original language	English
Pages (from-to)	H389-H391
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	9
DOIs	https://doi.org/10.1149/1.3608998
State	Published - 18 Jul 2011
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "p-ZnO/n-6H-SiC heterojunction has been fabricated by depositing Al-N co-doped p-type ZnO film on n-6H-SiC by a low-cost sol-gel technique. The junction shows good diode characteristics with a rectification ratio, (I F/IR) of about 35 at 4 V. The conduction band offset of the heterojunction has been measured by temperature dependent current-voltage characteristics. By fitting the experimental data, the current transport mechanism is shown to be dominated by the recombination tunneling and drift diffusion at lower and by the space-charge limited current at higher bias voltages.",

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AU - Basak, D.

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N2 - p-ZnO/n-6H-SiC heterojunction has been fabricated by depositing Al-N co-doped p-type ZnO film on n-6H-SiC by a low-cost sol-gel technique. The junction shows good diode characteristics with a rectification ratio, (I F/IR) of about 35 at 4 V. The conduction band offset of the heterojunction has been measured by temperature dependent current-voltage characteristics. By fitting the experimental data, the current transport mechanism is shown to be dominated by the recombination tunneling and drift diffusion at lower and by the space-charge limited current at higher bias voltages.

AB - p-ZnO/n-6H-SiC heterojunction has been fabricated by depositing Al-N co-doped p-type ZnO film on n-6H-SiC by a low-cost sol-gel technique. The junction shows good diode characteristics with a rectification ratio, (I F/IR) of about 35 at 4 V. The conduction band offset of the heterojunction has been measured by temperature dependent current-voltage characteristics. By fitting the experimental data, the current transport mechanism is shown to be dominated by the recombination tunneling and drift diffusion at lower and by the space-charge limited current at higher bias voltages.

UR - https://www.scopus.com/pages/publications/79960202998

U2 - 10.1149/1.3608998

DO - 10.1149/1.3608998

M3 - Article

AN - SCOPUS:79960202998

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JF - Electrochemical and Solid-State Letters

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ER -

Current transport mechanism in p-ZnO/n-6H-SiC heterojunction

Abstract

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