Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

C. S. Pathak; Manjari Garg; J. P. Singh; R. Singh

doi:10.1088/1361-6641/aab8a6

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

C. S. Pathak, Manjari Garg, J. P. Singh, R. Singh

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0-4.4 and 0.50-0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

Original language	English
Article number	055006
Journal	Semiconductor Science and Technology
Volume	33
Issue number	5
DOIs	https://doi.org/10.1088/1361-6641/aab8a6
State	Published - 16 Apr 2018
Externally published	Yes

Keywords

CAFM
KPFM
electrical
nanoscale, graphene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/1361-6641/aab8a6

Cite this

@article{18530631e67a488ab4e3692fc9629295,

title = "Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes",

abstract = "The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0-4.4 and 0.50-0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.",

keywords = "CAFM, KPFM, electrical, nanoscale, graphene",

author = "Pathak, {C. S.} and Manjari Garg and Singh, {J. P.} and R. Singh",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = apr,

day = "16",

doi = "10.1088/1361-6641/aab8a6",

language = "English",

volume = "33",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

AU - Pathak, C. S.

AU - Garg, Manjari

AU - Singh, J. P.

AU - Singh, R.

PY - 2018/4/16

Y1 - 2018/4/16

N2 - The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0-4.4 and 0.50-0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

AB - The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0-4.4 and 0.50-0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

KW - CAFM

KW - KPFM

KW - electrical

KW - nanoscale, graphene

UR - http://www.scopus.com/inward/record.url?scp=85046661668&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aab8a6

DO - 10.1088/1361-6641/aab8a6

M3 - Article

AN - SCOPUS:85046661668

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 055006

ER -

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this