Deep p-well pixel technology for CMOS back illuminated image sensors

Y. David, U. Efron

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A new technological solution for backside illuminated CMOS imagers is proposed. The pixel area consists of an n-well/substrate photo diode and a deep p-well, which contains the APS pixel circuitry as well as additional application specific circuits. This structure was analyzed using Silvaco's ATLAS device simulator. Simulation results show that this structure provides low cross-talk, high photo response and effectively shields the pixel circuitry from the photo charges generated in the substrate. The deep p-well pixel technology allows increasing the thickness of the die up to 30 micrometers, thus improving its mechanical ruggedness following the thinning process. Such deep p-well imager structure will also be integrated into the Image Transceiver Device, which combines a front side LCOS micro display with a back-illuminated imager.

Original languageEnglish
Title of host publication2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI
Pages67-70
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Event2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI - Eilat, Israel
Duration: 15 Nov 200617 Nov 2006

Publication series

NameIEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings

Conference

Conference2006 IEEE 24th Convention of Electrical and Electronics Engineers in Israel, IEEEI
Country/TerritoryIsrael
CityEilat
Period15/11/0617/11/06

Keywords

  • APS
  • Back-illuminated
  • CMOS image sensor
  • Crosstalk
  • Deep p-well
  • Image transceiver
  • Simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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