Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

Keyphrases

• Sapphire 100%
• Molecular Beam Epitaxy 100%
• Controlled Growth 100%
• GaN Nanorods 100%
• Dislocation 66%
• Nanorod Growth 66%
• Transmission Electron Microscopy 33%
• Surface Morphology 33%
• Single Crystal 33%
• Nucleate 33%
• Screw Dislocation 33%
• Atomic Steps 33%
• Growth Areas 33%
• Burgers Vector 33%
• Spiral Growth 33%
• GaN (0001) 33%
• Half Loop 33%
• Planar Faults 33%

Material Science

• Sapphire 100%
• Molecular Beam Epitaxy 100%
• Nanorod 100%
• Transmission Electron Microscopy 25%
• Surface Morphology 25%
• Single Crystal 25%
• Screw Dislocation 25%
• Burger Vector 25%