Defects in epitaxial layers of silicon-germanium grown on silicon substrates

Crystal defects of various kinds found in epitaxially grown Si/Ge alloy layers on Si substrate, may be either inherent to the material and originating from atomic radii misfit, or can be traced to the growth process and controlled or eliminated by varying its parameters. A network of slip lines, becoming more pronounced with increased Ge content, indicates plastic deformation resulting from partial relief of stresses during the high temperature growth process. Electron microprobe and X-ray diffraction analysis indicate some Ge segregation in the fault vicinity, and a slight anisotropy in the lattice constant expansion due to the Ge.