Defects in epitaxial layers of silicon-germanium grown on silicon substrates

H. Aharoni, A. Bar-Lev, S. Margalit

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Crystal defects of various kinds found in epitaxially grown Si/Ge alloy layers on Si substrate, may be either inherent to the material and originating from atomic radii misfit, or can be traced to the growth process and controlled or eliminated by varying its parameters. A network of slip lines, becoming more pronounced with increased Ge content, indicates plastic deformation resulting from partial relief of stresses during the high temperature growth process. Electron microprobe and X-ray diffraction analysis indicate some Ge segregation in the fault vicinity, and a slight anisotropy in the lattice constant expansion due to the Ge.

Original languageEnglish
Pages (from-to)254-260
Number of pages7
JournalJournal of Crystal Growth
Issue numberC
StatePublished - 1 Jan 1972
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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