Defects in epitaxial layers of silicon-germanium grown on silicon substrates

Engineering & Materials Science

• Si-Ge alloys 100%
• Growth temperature 88%
• Crystal defects 87%
• Epitaxial films 82%
• Lattice constants 81%
• Germanium 73%
• X ray diffraction analysis 68%
• Anisotropy 56%
• Electrons 54%
• Plastic deformation 48%
• Silicon 42%
• Substrates 38%
• Defects 37%

Chemical Compounds

• Epitaxial Film 77%
• Plastic Deformation 68%
• Crystal Defect 64%
• Lattice Constant 60%
• Anisotropy 51%
• Alloy 38%
• X-Ray Diffraction 27%

Physics & Astronomy

• germanium 48%
• defects 30%
• silicon 29%
• crystal defects 26%
• plastic deformation 24%
• slip 23%
• anisotropy 17%
• expansion 17%
• radii 16%
• diffraction 14%
• x rays 12%
• electrons 11%