Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si (001)

DH Rich, A Samsavar, T Miller, FM Leibsle, T-C Chiang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Photoemission of the Sb-covered Si(001) surface showed that the Fermi-level position crosses the conduction-band minimum of Si for Sb coverages approaching a 1-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) surface revealed the existence of an occupied initial state located near the conduction-band minimum. The metallic character of the surface is shown to be indicative of degenerate doping in the near-surface region.
Original languageEnglish GB
Pages (from-to)3469
Number of pages1
JournalPhysical Review B
Volume40
Issue number5
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Condensed Matter Physics

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