Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)

D. H. Rich; A. Samsavar; T. Miller; F. M. Leibsle; T. C. Chiang

doi:10.1103/PhysRevB.40.3469

Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)

D. H. Rich, A. Samsavar, T. Miller, F. M. Leibsle, T. C. Chiang

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Abstract

Photoemission of the Sb-covered Si(001) surface showed that the Fermi-level position crosses the conduction-band minimum of Si for Sb coverages approaching a 1-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) surface revealed the existence of an occupied initial state located near the conduction-band minimum. The metallic character of the surface is shown to be indicative of degenerate doping in the near-surface region.

Original language	English
Pages (from-to)	3469-3472
Number of pages	4
Journal	Physical Review B
Volume	40
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.40.3469
State	Published - 1 Jan 1989
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)",

abstract = "Photoemission of the Sb-covered Si(001) surface showed that the Fermi-level position crosses the conduction-band minimum of Si for Sb coverages approaching a 1-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) surface revealed the existence of an occupied initial state located near the conduction-band minimum. The metallic character of the surface is shown to be indicative of degenerate doping in the near-surface region.",

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AU - Rich, D. H.

AU - Samsavar, A.

AU - Miller, T.

AU - Leibsle, F. M.

AU - Chiang, T. C.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Photoemission of the Sb-covered Si(001) surface showed that the Fermi-level position crosses the conduction-band minimum of Si for Sb coverages approaching a 1-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) surface revealed the existence of an occupied initial state located near the conduction-band minimum. The metallic character of the surface is shown to be indicative of degenerate doping in the near-surface region.

AB - Photoemission of the Sb-covered Si(001) surface showed that the Fermi-level position crosses the conduction-band minimum of Si for Sb coverages approaching a 1-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) surface revealed the existence of an occupied initial state located near the conduction-band minimum. The metallic character of the surface is shown to be indicative of degenerate doping in the near-surface region.

UR - https://www.scopus.com/pages/publications/0009669235

U2 - 10.1103/PhysRevB.40.3469

DO - 10.1103/PhysRevB.40.3469

M3 - Article

AN - SCOPUS:0009669235

SN - 0163-1829

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JO - Physical Review B

JF - Physical Review B

IS - 5

ER -

Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)

Abstract

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