Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors

G. Sarusi; D. Eger; A. Zemel; Nili Mainzer; R. Goshen; Eliezer Weiss

doi:10.1109/23.101227

Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors

G. Sarusi, D. Eger, A. Zemel, Nili Mainzer, R. Goshen, Eliezer Weiss

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Planar n⁺p Hg_1−xCd_xTe (x=0.23) photodiodes passivated with ZnS were irradiated by Co⁶⁰ gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect was found by exposing the photodiodes to U.V illumination from a high pressure mercury lamp. By filtering the U.V light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C-V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed.

Original language	English
Pages (from-to)	2042-2049
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	37
Issue number	6
DOIs	https://doi.org/10.1109/23.101227
State	Published - 1 Jan 1990
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/23.101227

Cite this

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title = "Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors",

abstract = "Planar n+p Hg1−xCdxTe (x=0.23) photodiodes passivated with ZnS were irradiated by Co60 gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect was found by exposing the photodiodes to U.V illumination from a high pressure mercury lamp. By filtering the U.V light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C-V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed.",

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T1 - Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors

AU - Sarusi, G.

AU - Eger, D.

AU - Zemel, A.

AU - Mainzer, Nili

AU - Goshen, R.

AU - Weiss, Eliezer

PY - 1990/1/1

Y1 - 1990/1/1

N2 - Planar n+p Hg1−xCdxTe (x=0.23) photodiodes passivated with ZnS were irradiated by Co60 gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect was found by exposing the photodiodes to U.V illumination from a high pressure mercury lamp. By filtering the U.V light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C-V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed.

AB - Planar n+p Hg1−xCdxTe (x=0.23) photodiodes passivated with ZnS were irradiated by Co60 gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect was found by exposing the photodiodes to U.V illumination from a high pressure mercury lamp. By filtering the U.V light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C-V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed.

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Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors

Abstract

ASJC Scopus subject areas

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