Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors

G. Sarusi, D. Eger, A. Zemel, Nili Mainzer, R. Goshen, Eliezer Weiss

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Planar n+p Hg1−xCdxTe (x=0.23) photodiodes passivated with ZnS were irradiated by Co60 gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect was found by exposing the photodiodes to U.V illumination from a high pressure mercury lamp. By filtering the U.V light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C-V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed.

Original languageEnglish
Pages (from-to)2042-2049
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - 1 Jan 1990
Externally publishedYes


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