Degradation processes in surface layers of indium oxide

David L. Fuks, Arnold E. Kiv, Dina V. Shapiro, Vyacheslav V. Golovanov, Vasilij N. Šmatko, Ivan I. Donchev

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1 Scopus citations


The degradation of In 2O 3 (110) surface as a working surface in the In 2O 3 -based sensor is studied. Theoretical and experimental investigations of electronic and atomic processes on this surface caused by the adsorption of H 2 molecules are performed. In the framework of the density functional theory, we determined the energetically preferable position of the adsorbed H 2 molecule over In 2O 3 surface. It was found that the adsorbed H 2 molecule is mainly bonded with In atom. The redistribution of the electron density around In atom leads to a weakening of chemical bonds in the vicinity of In atom, and this circumstance is a reason of its destabilization. The temperature dependence of the resistance of In 2O 3 films in a wide interval of temperatures was measured. This dependence is characterized by a specific maximum. The obtained experimental results are interpreted using theoretical results concerning a destabilization of surface In atoms induced by the adsorbed H 2 molecules and, on the basis of our recent results in an earlier paper, concerning a high-temperature degradation of the In 2O 3 (110) surface layers as a working surface in sensor devices. We suggested a two-stage model of the degradation process: In the first stage, the disordering of surface caused by H 2 -adsorption- stimulated displacement of In atoms leads to the increase of surface resistance, and in the second stage, displaced In atoms form precipitates and this process causes a metallization of In 2O 3 surface and a decrease of the resistance.

Original languageEnglish
Article number6095613
Pages (from-to)133-138
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Issue number1
StatePublished - 1 Mar 2012


  • Degradation
  • density functional theory (DFT)
  • semiconductor films
  • sensor systems

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering


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