Dependence of IR optical properties of bulk-doped silicon on carrier concentration

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1 Scopus citations

Abstract

The infrared optical constants (index of refraction and extinction coefficient) and reflectance of bulk-doped n-silicon are calculated for electron concentrations up to 1021 cm-3. These calculations are based on generalized Drude-Lorentz form of dynamic dielectric function and current relaxation approach. A nonmonotonic behavior of IR absorption versus electron concentration is found. A connection between the theoretical results and available experimental data is discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsItzhak Shladov, Yitzhak Weissman, Moshe Oron
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages210-215
Number of pages6
ISBN (Print)081941218X
StatePublished - 1 Dec 1993
Event8th Meeting on Optical Engineering on Israel: Optoelectronics and Applications in Industry and Medicine - Tel Aviv, Isr
Duration: 14 Dec 199216 Dec 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1972
ISSN (Print)0277-786X

Conference

Conference8th Meeting on Optical Engineering on Israel: Optoelectronics and Applications in Industry and Medicine
CityTel Aviv, Isr
Period14/12/9216/12/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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