@inproceedings{0e0e7c0b46124bdea6863253a81f2a2e,
title = "Dependence of IR optical properties of bulk-doped silicon on carrier concentration",
abstract = "The infrared optical constants (index of refraction and extinction coefficient) and reflectance of bulk-doped n-silicon are calculated for electron concentrations up to 1021 cm-3. These calculations are based on generalized Drude-Lorentz form of dynamic dielectric function and current relaxation approach. A nonmonotonic behavior of IR absorption versus electron concentration is found. A connection between the theoretical results and available experimental data is discussed.",
author = "Shlomo Hava and M. Auslender",
year = "1993",
month = dec,
day = "1",
language = "English",
isbn = "081941218X",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",
pages = "210--215",
editor = "Itzhak Shladov and Yitzhak Weissman and Moshe Oron",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "8th Meeting on Optical Engineering on Israel: Optoelectronics and Applications in Industry and Medicine ; Conference date: 14-12-1992 Through 16-12-1992",
}