Abstract
A low pressure r.f. plasma was applied to deposit SiC coatings onto Ti6A14V substrates. The coatings were deposited onto substrates at temperatures of 140–390°C from a gas mixture of tetramethylsilane (TMS), argon and hydrogen. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy were employed to identify and to characterize the coatings obtained. It was found that the coatings were hexagonal α-SiC of type III. The coating thickness approximately follows a parabolic time law. A maximum rate of deposition was observed in the pressure range 5–6 mbar. The rate of deposition increases with concentration of TMS up to 0.05% and remains approximately constant up to 0.12%
Original language | English |
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Pages (from-to) | 497-502 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 72 |
Issue number | 3 |
DOIs | |
State | Published - 1 Jan 1980 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry