Design and analysis of an image transceiver device with a low cross-talk level

Y. David; U. Efron

Design and analysis of an image transceiver device with a low cross-talk level

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

The Image Transceiver Device (ITD) combines a back-illuminated APS Imager with an LCOS micro-display formed on the front-side of the CMOS chip. Three ITD structure: n-well process based, twin-well process based and a deep p-well structure are examined by means of Silvaco's ATLAS device simulator. The simulated results shows that a deep p-well pixel structure provides low cross-talk for the backside imager as well as an effective photo charge shielding for the pixel circuitry.

Original language	English
Pages	41-43
Number of pages	3
State	Published - 1 Dec 2004
Event	2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings - Tel-Aviv, Israel Duration: 6 Sep 2004 → 7 Sep 2004

Conference

Conference	2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings
Country/Territory	Israel
City	Tel-Aviv
Period	6/09/04 → 7/09/04

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

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title = "Design and analysis of an image transceiver device with a low cross-talk level",

abstract = "The Image Transceiver Device (ITD) combines a back-illuminated APS Imager with an LCOS micro-display formed on the front-side of the CMOS chip. Three ITD structure: n-well process based, twin-well process based and a deep p-well structure are examined by means of Silvaco's ATLAS device simulator. The simulated results shows that a deep p-well pixel structure provides low cross-talk for the backside imager as well as an effective photo charge shielding for the pixel circuitry.",

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AU - David, Y.

AU - Efron, U.

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AB - The Image Transceiver Device (ITD) combines a back-illuminated APS Imager with an LCOS micro-display formed on the front-side of the CMOS chip. Three ITD structure: n-well process based, twin-well process based and a deep p-well structure are examined by means of Silvaco's ATLAS device simulator. The simulated results shows that a deep p-well pixel structure provides low cross-talk for the backside imager as well as an effective photo charge shielding for the pixel circuitry.

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M3 - Paper

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T2 - 2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings

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ER -

Design and analysis of an image transceiver device with a low cross-talk level

Abstract

Conference

ASJC Scopus subject areas

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