Abstract
Quantum efficiency of long-base n+p junction silicon solar cells with a SiO2 layer deposited on the top of cell, and with one-dimensional gratings etched in the cell's top is considered. It is assumed that the region where the useful absorption occurs is outside the grating region. The efficiency is independently optimized by adjusting the layer depth, and the grating dimensions, respectively. It is shown that optimum efficiency of the cells with grating is higher than that of the cell with SiO2 layer.
Original language | English |
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Pages (from-to) | 180-185 |
Number of pages | 6 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3138 |
DOIs | |
State | Published - 1 Dec 1997 |
Event | Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XV - San Diego, CA, United States Duration: 28 Jul 1997 → 29 Jul 1997 |
Keywords
- Conventional silicon solar cells
- Diffraction gratings
- Solar energy absorption
- np junction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering