Design consideration of gan hemt for a three-phase motor inverter and the impact of the reverse conduction on the losses of inverters

Shmuel Ben-Yaakov, Roman Volkov, David Shapiro, Evgeny Rozanov, Valery Veprinsky, Oleg Dubinsky, Ilia Bunin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The impact of reverse conduction of a depletion mode (D Mode) GaN HEMT was studied experimentally by comparing the losses of two half bridge configurations one with and one without an antiparallel SiC diodes. The results show that with a dead time of 200ns, the reverse conduction of the GaN increases the losses by an insignificant 0.15% at 100kHz switching frequency, and hence that the relatively high cost SiC anti parallel diode is superfluous. Based on these results, a three-phase motor drive inverter with six parallel GaN switches per each leg, without parallel diodes, was designed, constructed and tested experimentally.

Original languageEnglish
Title of host publicationPCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020
PublisherMesago PCIM GmbH
Pages1843-1848
Number of pages6
ISBN (Print)9783800752454
StatePublished - 1 Jan 2020
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020 - Virtual, Online
Duration: 7 Jul 20208 Jul 2020

Publication series

NamePCIM Europe Conference Proceedings
Volume1
ISSN (Electronic)2191-3358

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020
CityVirtual, Online
Period7/07/208/07/20

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