Detection of 9.5 μm CO2 laser pulses in indium doped PbTe p-n junction

J. Gradauskas; B. Dzundza; L. Chernyak; Z. Dashevsky

doi:10.1016/j.physb.2021.412855

Detection of 9.5 μm CO₂ laser pulses in indium doped PbTe p-n junction

J. Gradauskas, B. Dzundza, L. Chernyak, Z. Dashevsky

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A unique feature of the PbTe semiconductor is the growth of its forbidden energy gap with increasing temperature. This allows saving diode-typical characteristics at temperatures up to 180 K. PbTe p-n diodes were fabricated by means of indium donor diffusion into PbTe single crystals grown using the Czochralski technique. The dark saturation current density was ~10⁻⁵ A/cm² at T = 100 K, whereas at T = 180 K it reached ~10⁻¹ A/cm². The photovoltage signals induced by a pulsed CO₂ laser light across PbTe p-n junction were investigated over the 100–180 K temperature range. The two-photon absorption-caused photovoltaic effect is observed for the first time in In doped PbTe p-n junction for 9.5 μm wavelength at T = 100 K.

Original language	English
Article number	412855
Journal	Physica B: Condensed Matter
Volume	607
DOIs	https://doi.org/10.1016/j.physb.2021.412855
State	Published - 15 Apr 2021

Keywords

CO2 laser
Doping
Infrared detection
Lead telluride
p-n junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.physb.2021.412855

Cite this

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title = "Detection of 9.5 μm CO2 laser pulses in indium doped PbTe p-n junction",

abstract = "A unique feature of the PbTe semiconductor is the growth of its forbidden energy gap with increasing temperature. This allows saving diode-typical characteristics at temperatures up to 180 K. PbTe p-n diodes were fabricated by means of indium donor diffusion into PbTe single crystals grown using the Czochralski technique. The dark saturation current density was ~10−5 A/cm2 at T = 100 K, whereas at T = 180 K it reached ~10−1 A/cm2. The photovoltage signals induced by a pulsed CO2 laser light across PbTe p-n junction were investigated over the 100–180 K temperature range. The two-photon absorption-caused photovoltaic effect is observed for the first time in In doped PbTe p-n junction for 9.5 μm wavelength at T = 100 K.",

keywords = "CO2 laser, Doping, Infrared detection, Lead telluride, p-n junction",

author = "J. Gradauskas and B. Dzundza and L. Chernyak and Z. Dashevsky",

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AU - Gradauskas, J.

AU - Dzundza, B.

AU - Chernyak, L.

AU - Dashevsky, Z.

PY - 2021/4/15

Y1 - 2021/4/15

N2 - A unique feature of the PbTe semiconductor is the growth of its forbidden energy gap with increasing temperature. This allows saving diode-typical characteristics at temperatures up to 180 K. PbTe p-n diodes were fabricated by means of indium donor diffusion into PbTe single crystals grown using the Czochralski technique. The dark saturation current density was ~10−5 A/cm2 at T = 100 K, whereas at T = 180 K it reached ~10−1 A/cm2. The photovoltage signals induced by a pulsed CO2 laser light across PbTe p-n junction were investigated over the 100–180 K temperature range. The two-photon absorption-caused photovoltaic effect is observed for the first time in In doped PbTe p-n junction for 9.5 μm wavelength at T = 100 K.

AB - A unique feature of the PbTe semiconductor is the growth of its forbidden energy gap with increasing temperature. This allows saving diode-typical characteristics at temperatures up to 180 K. PbTe p-n diodes were fabricated by means of indium donor diffusion into PbTe single crystals grown using the Czochralski technique. The dark saturation current density was ~10−5 A/cm2 at T = 100 K, whereas at T = 180 K it reached ~10−1 A/cm2. The photovoltage signals induced by a pulsed CO2 laser light across PbTe p-n junction were investigated over the 100–180 K temperature range. The two-photon absorption-caused photovoltaic effect is observed for the first time in In doped PbTe p-n junction for 9.5 μm wavelength at T = 100 K.

KW - CO2 laser

KW - Doping

KW - Infrared detection

KW - Lead telluride

KW - p-n junction

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