Single crystal solid solution heteroepitaxial layers of Si - Ge were grown on silicon substrates by reduction of SiCl//4 and GeCl//4 simultaneously at temperatures of 1100 degree -1240 degree C. The relation between GeCl//4/SiCl//4 molar ratios in the gas phase to the Ge/Si ratios obtained as a result in the grown layer is determined by measurements. The content of the silicon and germanium compounds in the gas phase has been calculated, the ratio of GeCl//4/SiCl//4 being 0. 045 to 0. 347 through use of their partial pressures and flow rates in various parts of the growth system. The content of the elements in the solid grown layer has been measured using an electron-microprobe calibrated with crystals of known Si and Ge contents. The Ge/Si ratio was found to be 0. 12 to 0. 44. From the results, it appears that the amounts of silicon and germanium in the grown layer can be previously controlled and determined to the desired values.
|Number of pages||7|
|Journal||Israel Journal of Technology|
|State||Published - 1 Jan 1976|
ASJC Scopus subject areas
- Engineering (all)