Determination of the concentrations of trace and doping elements in GaAs by neutron activation analysis

R. S. Liu; P. Y. Chen; Z. B. Alfassi; M. H. Yang

doi:10.1007/BF02035799

Determination of the concentrations of trace and doping elements in GaAs by neutron activation analysis

R. S. Liu, P. Y. Chen, Z. B. Alfassi, M. H. Yang

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Abstract

The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl₃. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.

Original language	English
Pages (from-to)	317-326
Number of pages	10
Journal	Journal of Radioanalytical and Nuclear Chemistry
Volume	141
Issue number	2
DOIs	https://doi.org/10.1007/BF02035799
State	Published - 1 Aug 1990
Externally published	Yes

ASJC Scopus subject areas

Analytical Chemistry
Nuclear Energy and Engineering
Radiology Nuclear Medicine and imaging
Pollution
Spectroscopy
Public Health, Environmental and Occupational Health
Health, Toxicology and Mutagenesis

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10.1007/BF02035799

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title = "Determination of the concentrations of trace and doping elements in GaAs by neutron activation analysis",

abstract = "The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.",

author = "Liu, {R. S.} and Chen, {P. Y.} and Alfassi, {Z. B.} and Yang, {M. H.}",

year = "1990",

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AU - Liu, R. S.

AU - Chen, P. Y.

AU - Alfassi, Z. B.

AU - Yang, M. H.

PY - 1990/8/1

Y1 - 1990/8/1

N2 - The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.

AB - The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.

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DO - 10.1007/BF02035799

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AN - SCOPUS:0025027721

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JO - Journal of Radioanalytical and Nuclear Chemistry

JF - Journal of Radioanalytical and Nuclear Chemistry

IS - 2

ER -

Determination of the concentrations of trace and doping elements in GaAs by neutron activation analysis

Abstract

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