Development of a large high-performance 2-D array of GaAs-AlGaAs multiple quantum-well modulators

Uriel Arad; Eddie Redmard; Moshe Shamay; Arkadi Averboukh; Shimon Levit; Uzi Efron

doi:10.1109/LPT.2003.818663

Development of a large high-performance 2-D array of GaAs-AlGaAs multiple quantum-well modulators

Uriel Arad
, Eddie Redmard
, Moshe Shamay
, Arkadi Averboukh
, Shimon Levit
, Uzi Efron

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We present the development of an ultrafast two-dimensional (288 × 132 elements) reflection modulator array based on GaAs-AlGaAs multiple quantum-wells embedded in asymmetric Fabry-Pérot structure. The array has low operation voltage (< 4 V), low insertion loss, and high contrast ratio at ∼846 nm. This array was hybridized to 0.25 um complementary metal-oxide-semiconductor driver providing 256 gray levels resolution at frame rate of 50 kHz (driver limited). Major progress in reducing the severe nonuniformity problem of the cavity resonance wavelength in such devices to less than 3.4 nm variation across a 4-in wafer was achieved.

Original language	English
Pages (from-to)	1531-1533
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	15
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2003.818663
State	Published - 1 Nov 2003

Keywords

Arrays
Excitons
Fabry-Pérot resonators
Optical correlators
Quantum wells
Quantum-confined Stark effect
Spatial light modulators
Ultrahigh-frequency modulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2003.818663

Cite this

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title = "Development of a large high-performance 2-D array of GaAs-AlGaAs multiple quantum-well modulators",

abstract = "We present the development of an ultrafast two-dimensional (288 × 132 elements) reflection modulator array based on GaAs-AlGaAs multiple quantum-wells embedded in asymmetric Fabry-P{\'e}rot structure. The array has low operation voltage (< 4 V), low insertion loss, and high contrast ratio at ∼846 nm. This array was hybridized to 0.25 um complementary metal-oxide-semiconductor driver providing 256 gray levels resolution at frame rate of 50 kHz (driver limited). Major progress in reducing the severe nonuniformity problem of the cavity resonance wavelength in such devices to less than 3.4 nm variation across a 4-in wafer was achieved.",

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author = "Uriel Arad and Eddie Redmard and Moshe Shamay and Arkadi Averboukh and Shimon Levit and Uzi Efron",

year = "2003",

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doi = "10.1109/LPT.2003.818663",

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T1 - Development of a large high-performance 2-D array of GaAs-AlGaAs multiple quantum-well modulators

AU - Arad, Uriel

AU - Redmard, Eddie

AU - Shamay, Moshe

AU - Averboukh, Arkadi

AU - Levit, Shimon

AU - Efron, Uzi

PY - 2003/11/1

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N2 - We present the development of an ultrafast two-dimensional (288 × 132 elements) reflection modulator array based on GaAs-AlGaAs multiple quantum-wells embedded in asymmetric Fabry-Pérot structure. The array has low operation voltage (< 4 V), low insertion loss, and high contrast ratio at ∼846 nm. This array was hybridized to 0.25 um complementary metal-oxide-semiconductor driver providing 256 gray levels resolution at frame rate of 50 kHz (driver limited). Major progress in reducing the severe nonuniformity problem of the cavity resonance wavelength in such devices to less than 3.4 nm variation across a 4-in wafer was achieved.

AB - We present the development of an ultrafast two-dimensional (288 × 132 elements) reflection modulator array based on GaAs-AlGaAs multiple quantum-wells embedded in asymmetric Fabry-Pérot structure. The array has low operation voltage (< 4 V), low insertion loss, and high contrast ratio at ∼846 nm. This array was hybridized to 0.25 um complementary metal-oxide-semiconductor driver providing 256 gray levels resolution at frame rate of 50 kHz (driver limited). Major progress in reducing the severe nonuniformity problem of the cavity resonance wavelength in such devices to less than 3.4 nm variation across a 4-in wafer was achieved.

KW - Arrays

KW - Excitons

KW - Fabry-Pérot resonators

KW - Optical correlators

KW - Quantum wells

KW - Quantum-confined Stark effect

KW - Spatial light modulators

KW - Ultrahigh-frequency modulation

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DO - 10.1109/LPT.2003.818663

M3 - Article

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EP - 1533

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

Development of a large high-performance 2-D array of GaAs-AlGaAs multiple quantum-well modulators

Abstract

Keywords

ASJC Scopus subject areas

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