Development of thermal sensor based on PbTe thin films in MEMS design

Zinovi Dashevsky; Eli Rabih; Moshe Dariel

doi:10.1117/12.639180

Development of thermal sensor based on PbTe thin films in MEMS design

Zinovi Dashevsky, Eli Rabih, Moshe Dariel

Department of Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The work of a MEMS-technology compatible thin-film thermoelectric IR radiation sensor with multiple PbTe thermocouples is simulated. The sensitivity up to 350 V/W is predicted. PbTe thin films are grown on the BaF ₂(111) buffered Si(111) substrates, using the hot-wall-beam epitaxy technique. Indium and zinc ion implantation is applied to transform the as-grown-p-PbTe films into the n-type thermocouple counterpart films. With a dose of 10₁₆ cm_-2 and exposition time of 3-4 h, a 4-μm-thick film is homogeneously reversed, retaining the high epitaxial quality.

Original language	English
Article number	59461B
Pages (from-to)	1-7
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5946
DOIs	https://doi.org/10.1117/12.639180
State	Published - 1 Dec 2005
Event	Optical Materials and Applications - Tartu, Estonia Duration: 6 Jul 2004 → 9 Jul 2004

Keywords

Hot-wall-beam epitaxy
IR sensors
IV-VI semiconductor compounds
Thin-film thermoelectric battery

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.639180

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title = "Development of thermal sensor based on PbTe thin films in MEMS design",

abstract = "The work of a MEMS-technology compatible thin-film thermoelectric IR radiation sensor with multiple PbTe thermocouples is simulated. The sensitivity up to 350 V/W is predicted. PbTe thin films are grown on the BaF 2(111) buffered Si(111) substrates, using the hot-wall-beam epitaxy technique. Indium and zinc ion implantation is applied to transform the as-grown-p-PbTe films into the n-type thermocouple counterpart films. With a dose of 1016 cm-2 and exposition time of 3-4 h, a 4-μm-thick film is homogeneously reversed, retaining the high epitaxial quality.",

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AU - Rabih, Eli

AU - Dariel, Moshe

PY - 2005/12/1

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N2 - The work of a MEMS-technology compatible thin-film thermoelectric IR radiation sensor with multiple PbTe thermocouples is simulated. The sensitivity up to 350 V/W is predicted. PbTe thin films are grown on the BaF 2(111) buffered Si(111) substrates, using the hot-wall-beam epitaxy technique. Indium and zinc ion implantation is applied to transform the as-grown-p-PbTe films into the n-type thermocouple counterpart films. With a dose of 1016 cm-2 and exposition time of 3-4 h, a 4-μm-thick film is homogeneously reversed, retaining the high epitaxial quality.

AB - The work of a MEMS-technology compatible thin-film thermoelectric IR radiation sensor with multiple PbTe thermocouples is simulated. The sensitivity up to 350 V/W is predicted. PbTe thin films are grown on the BaF 2(111) buffered Si(111) substrates, using the hot-wall-beam epitaxy technique. Indium and zinc ion implantation is applied to transform the as-grown-p-PbTe films into the n-type thermocouple counterpart films. With a dose of 1016 cm-2 and exposition time of 3-4 h, a 4-μm-thick film is homogeneously reversed, retaining the high epitaxial quality.

KW - Hot-wall-beam epitaxy

KW - IR sensors

KW - IV-VI semiconductor compounds

KW - Thin-film thermoelectric battery

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JF - Proceedings of SPIE - The International Society for Optical Engineering

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Development of thermal sensor based on PbTe thin films in MEMS design

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Keywords

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