Development of thermal sensor based on PbTe thin films in MEMS design

Zinovi Dashevsky, Eli Rabih, Moshe Dariel

Research output: Contribution to journalConference articlepeer-review


The work of a MEMS-technology compatible thin-film thermoelectric IR radiation sensor with multiple PbTe thermocouples is simulated. The sensitivity up to 350 V/W is predicted. PbTe thin films are grown on the BaF 2(111) buffered Si(111) substrates, using the hot-wall-beam epitaxy technique. Indium and zinc ion implantation is applied to transform the as-grown-p-PbTe films into the n-type thermocouple counterpart films. With a dose of 1016 cm-2 and exposition time of 3-4 h, a 4-μm-thick film is homogeneously reversed, retaining the high epitaxial quality.

Original languageEnglish
Article number59461B
Pages (from-to)1-7
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1 Dec 2005
EventOptical Materials and Applications - Tartu, Estonia
Duration: 6 Jul 20049 Jul 2004


  • Hot-wall-beam epitaxy
  • IR sensors
  • IV-VI semiconductor compounds
  • Thin-film thermoelectric battery

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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