Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts

Dinesh Kumar; N. Shyam Krishnan; Murugaiya Sridar Ilango; Sheela K. Ramasesha

doi:10.1007/s10825-020-01605-3

Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts

Dinesh Kumar, N. Shyam Krishnan, Murugaiya Sridar Ilango, Sheela K. Ramasesha

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Device simulations of a novel nanopillar-based n-CdS/p-CdTe solar cell with back contacts are carried out using the SILVACO technology computer-aided design (TCAD) device simulator. The device consists of nanopillars of CdTe coated with a very thin layer of CdS. It is shown that, for nanopillars with increasing height but given width as well as increasing width and given height, device performance parameters such as the open-circuit voltage (V_oc), short-circuit current density (J_sc), fill factor, and solar cell conversion efficiency (η) increase. However, there is an optimum number of nanopillars that can be integrated into a given device area, while integration of more or fewer than this optimum value will deteriorate the device performance.

Original language	English
Pages (from-to)	324-329
Number of pages	6
Journal	Journal of Computational Electronics
Volume	20
Issue number	1
DOIs	https://doi.org/10.1007/s10825-020-01605-3
State	Published - 1 Feb 2021
Externally published	Yes

Keywords

Back contact
CdS/CdTe solar cell
Nanopillar
Photovoltaic (PV) devices
TCAD simulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1007/s10825-020-01605-3

Cite this

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title = "Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts",

abstract = "Device simulations of a novel nanopillar-based n-CdS/p-CdTe solar cell with back contacts are carried out using the SILVACO technology computer-aided design (TCAD) device simulator. The device consists of nanopillars of CdTe coated with a very thin layer of CdS. It is shown that, for nanopillars with increasing height but given width as well as increasing width and given height, device performance parameters such as the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor, and solar cell conversion efficiency (η) increase. However, there is an optimum number of nanopillars that can be integrated into a given device area, while integration of more or fewer than this optimum value will deteriorate the device performance.",

keywords = "Back contact, CdS/CdTe solar cell, Nanopillar, Photovoltaic (PV) devices, TCAD simulation",

author = "Dinesh Kumar and Krishnan, \{N. Shyam\} and Ilango, \{Murugaiya Sridar\} and Ramasesha, \{Sheela K.\}",

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doi = "10.1007/s10825-020-01605-3",

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journal = "Journal of Computational Electronics",

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T1 - Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts

AU - Kumar, Dinesh

AU - Krishnan, N. Shyam

AU - Ilango, Murugaiya Sridar

AU - Ramasesha, Sheela K.

PY - 2021/2/1

Y1 - 2021/2/1

N2 - Device simulations of a novel nanopillar-based n-CdS/p-CdTe solar cell with back contacts are carried out using the SILVACO technology computer-aided design (TCAD) device simulator. The device consists of nanopillars of CdTe coated with a very thin layer of CdS. It is shown that, for nanopillars with increasing height but given width as well as increasing width and given height, device performance parameters such as the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor, and solar cell conversion efficiency (η) increase. However, there is an optimum number of nanopillars that can be integrated into a given device area, while integration of more or fewer than this optimum value will deteriorate the device performance.

AB - Device simulations of a novel nanopillar-based n-CdS/p-CdTe solar cell with back contacts are carried out using the SILVACO technology computer-aided design (TCAD) device simulator. The device consists of nanopillars of CdTe coated with a very thin layer of CdS. It is shown that, for nanopillars with increasing height but given width as well as increasing width and given height, device performance parameters such as the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor, and solar cell conversion efficiency (η) increase. However, there is an optimum number of nanopillars that can be integrated into a given device area, while integration of more or fewer than this optimum value will deteriorate the device performance.

KW - Back contact

KW - CdS/CdTe solar cell

KW - Nanopillar

KW - Photovoltaic (PV) devices

KW - TCAD simulation

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DO - 10.1007/s10825-020-01605-3

M3 - Article

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SN - 1569-8025

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ER -

Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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