Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode

L. A. Balagurov; E. A. Katz; E. A. Petrova; A. V. Govorkov; N. I. Ritova; V. M. Evdokimov; A. E. Lük'yanov; N. A. Butilkina

doi:10.1063/1.362827

Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode

L. A. Balagurov, E. A. Katz, E. A. Petrova, A. V. Govorkov, N. I. Ritova, V. M. Evdokimov, A. E. Lük'yanov, N. A. Butilkina

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Abstract

Contacts metal/porous silicon and p/n device structures on porous silicon were studied by scanning electron microscopy in the electron-beam-induced current mode. It is shown that the drift processes are dominant in operation of porous silicon-based devices. We present the theoretical analysis of electron-beam-induced current measurements and estimate such important parameters of device structures as: the width of the space-charge region (several microns), charge state density in the space-charge region (10¹⁴-10¹⁵ cm^-3), and electron drift length (up to 10^-3 cm). The spatial distribution of the electric field in space-charge region was derived. The possibility of studying the influence of porous silicon/crystalline silicon interfaces on operation of porous silicon-based devices has been illustrated.

Original language	English
Pages (from-to)	574-578
Number of pages	5
Journal	Journal of Applied Physics
Volume	80
Issue number	1
DOIs	https://doi.org/10.1063/1.362827
State	Published - 1 Jul 1996
Externally published	Yes

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General Physics and Astronomy

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title = "Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode",

abstract = "Contacts metal/porous silicon and p/n device structures on porous silicon were studied by scanning electron microscopy in the electron-beam-induced current mode. It is shown that the drift processes are dominant in operation of porous silicon-based devices. We present the theoretical analysis of electron-beam-induced current measurements and estimate such important parameters of device structures as: the width of the space-charge region (several microns), charge state density in the space-charge region (1014-1015 cm-3), and electron drift length (up to 10-3 cm). The spatial distribution of the electric field in space-charge region was derived. The possibility of studying the influence of porous silicon/crystalline silicon interfaces on operation of porous silicon-based devices has been illustrated.",

author = "Balagurov, {L. A.} and Katz, {E. A.} and Petrova, {E. A.} and Govorkov, {A. V.} and Ritova, {N. I.} and Evdokimov, {V. M.} and L{\"u}k'yanov, {A. E.} and Butilkina, {N. A.}",

year = "1996",

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doi = "10.1063/1.362827",

language = "English",

volume = "80",

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T1 - Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode

AU - Balagurov, L. A.

AU - Katz, E. A.

AU - Petrova, E. A.

AU - Govorkov, A. V.

AU - Ritova, N. I.

AU - Evdokimov, V. M.

AU - Lük'yanov, A. E.

AU - Butilkina, N. A.

PY - 1996/7/1

Y1 - 1996/7/1

N2 - Contacts metal/porous silicon and p/n device structures on porous silicon were studied by scanning electron microscopy in the electron-beam-induced current mode. It is shown that the drift processes are dominant in operation of porous silicon-based devices. We present the theoretical analysis of electron-beam-induced current measurements and estimate such important parameters of device structures as: the width of the space-charge region (several microns), charge state density in the space-charge region (1014-1015 cm-3), and electron drift length (up to 10-3 cm). The spatial distribution of the electric field in space-charge region was derived. The possibility of studying the influence of porous silicon/crystalline silicon interfaces on operation of porous silicon-based devices has been illustrated.

AB - Contacts metal/porous silicon and p/n device structures on porous silicon were studied by scanning electron microscopy in the electron-beam-induced current mode. It is shown that the drift processes are dominant in operation of porous silicon-based devices. We present the theoretical analysis of electron-beam-induced current measurements and estimate such important parameters of device structures as: the width of the space-charge region (several microns), charge state density in the space-charge region (1014-1015 cm-3), and electron drift length (up to 10-3 cm). The spatial distribution of the electric field in space-charge region was derived. The possibility of studying the influence of porous silicon/crystalline silicon interfaces on operation of porous silicon-based devices has been illustrated.

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DO - 10.1063/1.362827

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JO - Journal of Applied Physics

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Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode

Abstract

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