TY - GEN
T1 - Differential input output CMOS (DINO-CMOS)-High performance and energy efficient logic family
AU - Haber, M.
AU - Levi, I.
AU - Yehoshua, Y.
AU - Fish, A.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/2
Y1 - 2017/7/2
N2 - Conventional static CMOS logic is the most popular circuit design style in today's digital designs. For many years CMOS logic gates have been preferred mainly for their rail-to-rail swings, strong on/off states, robust operation, large noise margins and low static power. However, one of the main drawbacks of CMOS gates is the need to implement complementary computation networks: The NMOS based pulldown network (PDN) and the pull-up (PUN) PMOS network. Both networks (depending on the logic function of gate) consist of a few stacked transistors. The number of stacked transistors increases with the increase of the Fan-In of the gate, which usually requires upsizing these transistors to improve performance and noise margins. This issue is even more crucial in gates such as NORs, where low mobility stacked PMOS transistors significantly limit the performance of the gate and require large transistors, thus increasing the intrinsic capacitance and power dissipation of the gate. An example of a conventional CMOS NOR3 gate is shown in Fig. 1(a).
AB - Conventional static CMOS logic is the most popular circuit design style in today's digital designs. For many years CMOS logic gates have been preferred mainly for their rail-to-rail swings, strong on/off states, robust operation, large noise margins and low static power. However, one of the main drawbacks of CMOS gates is the need to implement complementary computation networks: The NMOS based pulldown network (PDN) and the pull-up (PUN) PMOS network. Both networks (depending on the logic function of gate) consist of a few stacked transistors. The number of stacked transistors increases with the increase of the Fan-In of the gate, which usually requires upsizing these transistors to improve performance and noise margins. This issue is even more crucial in gates such as NORs, where low mobility stacked PMOS transistors significantly limit the performance of the gate and require large transistors, thus increasing the intrinsic capacitance and power dissipation of the gate. An example of a conventional CMOS NOR3 gate is shown in Fig. 1(a).
UR - http://www.scopus.com/inward/record.url?scp=85047767086&partnerID=8YFLogxK
U2 - 10.1109/S3S.2017.8309253
DO - 10.1109/S3S.2017.8309253
M3 - Conference contribution
AN - SCOPUS:85047767086
T3 - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
SP - 1
EP - 3
BT - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
PB - Institute of Electrical and Electronics Engineers
T2 - 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
Y2 - 16 October 2017 through 18 October 2017
ER -