Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements

Iris Visoly-Fisher; Sidney R. Cohen; David Cahen

doi:10.1063/1.1542926

Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements

Iris Visoly-Fisher
, Sidney R. Cohen
, David Cahen

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.

Original language	English
Pages (from-to)	556-558
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.1542926
State	Published - 27 Jan 2003
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1542926

Cite this

@article{f644b121d610473caa0ae9deaea3ad43,

title = "Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements",

abstract = "The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.",

author = "Iris Visoly-Fisher and Cohen, \{Sidney R.\} and David Cahen",

year = "2003",

month = jan,

day = "27",

doi = "10.1063/1.1542926",

language = "English",

volume = "82",

pages = "556--558",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements

AU - Visoly-Fisher, Iris

AU - Cohen, Sidney R.

AU - Cahen, David

PY - 2003/1/27

Y1 - 2003/1/27

N2 - The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.

AB - The direct characterization of a single grain boundary (GB) and a single grain surface in solar cell-quality CdTe was performed using scanning probe microscopy. It was found that scanning capacitance microscopy could be used to study polycrystalline electronic materials. The presence of a barrier for hole transport across GB in solar-cell quality CdTe was also observed.

UR - https://www.scopus.com/pages/publications/0037467944

U2 - 10.1063/1.1542926

DO - 10.1063/1.1542926

M3 - Article

AN - SCOPUS:0037467944

SN - 0003-6951

VL - 82

SP - 556

EP - 558

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Direct evidence for grain-boundary depletion in polycrystalline CdTe from nanoscale-resolved measurements

Abstract

UN SDGs

ASJC Scopus subject areas

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