Direct imaging of single Au atoms within GaAs nanowires

Maya Bar-Sadan, Juri Barthel, Hadas Shtrikman, Lothar Houben

Research output: Contribution to journalArticlepeer-review

148 Scopus citations


Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration-corrected scanning transmission electron microscopy (STEM) is now capable of directly imaging single Au atoms within the dense matrix of a GaAs crystal, by slightly tilting the GaAs lattice planes with respect to the incident electron beam. Au doping values in the order of 10 17-18 cm 3 were measured, making ballistic transport through the nanowires practically inaccessible.

Original languageEnglish
Pages (from-to)2352-2356
Number of pages5
JournalNano Letters
Issue number5
StatePublished - 9 May 2012


  • Single atom detection
  • dopants
  • nanowires
  • scanning transmission electron microscopy
  • transport phenomena

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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