Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

X. Zhang; R. R. Li; P. D. Dapkus; D. H. Rich

doi:10.1063/1.1312255

Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

X. Zhang, R. R. Li, P. D. Dapkus, D. H. Rich

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A sparse nucleation process on sapphire (0001) substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4 × 10⁴cm^-2. Based on this process, we performed direct lateral epitaxial overgrowth (LEO) of GaN by metalorganic chemical vapor deposition on patterned SiO₂/sapphire (0001) substrates. An aggregate lateral to vertical growth rate ratio of around 2:1 was achieved after the coalescence of the GaN stripes. Cathodoluminescence imaging shows strong and uniform near-band gap luminescence from LEO regions and confirms the improved quality of LEO GaN, which is further supported by atomic force microscopy analysis.

Original language	English
Pages (from-to)	2213-2215
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	14
DOIs	https://doi.org/10.1063/1.1312255
State	Published - 2 Oct 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique",

abstract = "A sparse nucleation process on sapphire (0001) substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4 × 104cm-2. Based on this process, we performed direct lateral epitaxial overgrowth (LEO) of GaN by metalorganic chemical vapor deposition on patterned SiO2/sapphire (0001) substrates. An aggregate lateral to vertical growth rate ratio of around 2:1 was achieved after the coalescence of the GaN stripes. Cathodoluminescence imaging shows strong and uniform near-band gap luminescence from LEO regions and confirms the improved quality of LEO GaN, which is further supported by atomic force microscopy analysis.",

author = "X. Zhang and Li, {R. R.} and Dapkus, {P. D.} and Rich, {D. H.}",

year = "2000",

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doi = "10.1063/1.1312255",

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AU - Zhang, X.

AU - Li, R. R.

AU - Dapkus, P. D.

AU - Rich, D. H.

PY - 2000/10/2

Y1 - 2000/10/2

N2 - A sparse nucleation process on sapphire (0001) substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4 × 104cm-2. Based on this process, we performed direct lateral epitaxial overgrowth (LEO) of GaN by metalorganic chemical vapor deposition on patterned SiO2/sapphire (0001) substrates. An aggregate lateral to vertical growth rate ratio of around 2:1 was achieved after the coalescence of the GaN stripes. Cathodoluminescence imaging shows strong and uniform near-band gap luminescence from LEO regions and confirms the improved quality of LEO GaN, which is further supported by atomic force microscopy analysis.

AB - A sparse nucleation process on sapphire (0001) substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4 × 104cm-2. Based on this process, we performed direct lateral epitaxial overgrowth (LEO) of GaN by metalorganic chemical vapor deposition on patterned SiO2/sapphire (0001) substrates. An aggregate lateral to vertical growth rate ratio of around 2:1 was achieved after the coalescence of the GaN stripes. Cathodoluminescence imaging shows strong and uniform near-band gap luminescence from LEO regions and confirms the improved quality of LEO GaN, which is further supported by atomic force microscopy analysis.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

Abstract

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