TY - JOUR
T1 - Disclosing the response of the surface electronic structure in SrTiO3(001) to strain
AU - Bonini Guedes, Eduardo
AU - Willemoes Jensen, Tobias
AU - Naamneh, Muntaser
AU - Chikina, Alla
AU - T. Dahm, Ramus
AU - Yun, Shinhee
AU - Chiabrera, Francesco M.
AU - Plumb, Nicholas C.
AU - Dil, J. Hugo
AU - Shi, Ming
AU - Valbjørn Christensen, Dennis
AU - Hugo Brito, Walber
AU - Pryds, Nini
AU - Radović, Milan
N1 - Funding Information:
M.N. received support from the Swiss National Science Foundation grant no. 200021_59678 and from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement no. 701647. N.P. and D.V.C. acknowledge the funding from Villum Fonden for the NEED project (00027993) and Danish Council for Independent Research Technology and Production Sciences for the DFF-Research Project 3 (Grant No. 00069B). W.H.B. acknowledges the Pró-Reitoria de Pesquisa of Universidade Federal de Minas Gerais, and the National Laboratory for Scientific Computing (LNCC/MCTI, Brazil) for providing HPC resources of the SDumont supercomputer, which have contributed to the research results, URL: http://sdumont.lncc.br.
Funding Information:
M.R. and E.B.G. acknowledge the support of SNF Project No. 200021_182695. E.B.G. was partially supported by the Sino-Swiss Science and Technology Cooperation grant No. IZLCZ2_170075.
Publisher Copyright:
© 2021 Author(s).
PY - 2022/1/1
Y1 - 2022/1/1
N2 - Combining angle-resolved photoemission spectroscopy and density functional theory calculations, we addressed the surface electronic structure of bent SrTiO 3 (STO) (001) wafers. Using a custom-made device, we observe that the low-dimensional states that emerge at the STO (001) surface are robust to an external tensile strain of about 0.1%. Our results show that this value of strain is too small to sensibly alter the surface conduction band of STO, but, surprisingly, it is enough to shift the energy of the in-gap states. In order to access higher strain values of around 2%, standard for STO-based heterostructures, we performed density functional theory calculations of STO slabs under different strain configurations. The simulations predict that such levels of both compressive and tensile strain significantly alter the orbital splitting of the surface conduction band. Our study indicates that the strain generated in STO can tailor the electronic properties of its bare surface and of STO-based interfaces.
AB - Combining angle-resolved photoemission spectroscopy and density functional theory calculations, we addressed the surface electronic structure of bent SrTiO 3 (STO) (001) wafers. Using a custom-made device, we observe that the low-dimensional states that emerge at the STO (001) surface are robust to an external tensile strain of about 0.1%. Our results show that this value of strain is too small to sensibly alter the surface conduction band of STO, but, surprisingly, it is enough to shift the energy of the in-gap states. In order to access higher strain values of around 2%, standard for STO-based heterostructures, we performed density functional theory calculations of STO slabs under different strain configurations. The simulations predict that such levels of both compressive and tensile strain significantly alter the orbital splitting of the surface conduction band. Our study indicates that the strain generated in STO can tailor the electronic properties of its bare surface and of STO-based interfaces.
UR - http://www.scopus.com/inward/record.url?scp=85122211912&partnerID=8YFLogxK
U2 - 10.1116/6.0001480
DO - 10.1116/6.0001480
M3 - Article
AN - SCOPUS:85122211912
SN - 0734-2101
VL - 40
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 1
M1 - 013213
ER -