Do structural defects affect semiconducting properties of fullerene thin films?

E. A. Katz, A. I. Shames, D. Faiman, S. Shtutina, Y. Cohen, S. Goren, W. Kempinski, L. Piekara-Sady

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations


We report on the time development of EPR signals (g = 2.0026±0.0002) from C60 films with various crystalline structure under air/light exposure. The time development consists of two clearly distinguished regions of fast and slow growth. Improvement of the film structure, and in particular the increase in grain size, leads to a deceleration of the `fast' growth. The results are explained assuming that EPR signal growth is controlled by oxygen diffusion, along grain boundaries and into grains, during the `fast' and `slow' periods, respectively. Fast decrease of the EPR signal as a result of in situ pumping strongly supports this model and indicates a correlation between crystalline structure and oxygen diffusion in C60 films. Such correlation is considered as one of the possible mechanisms which govern the semiconducting properties of the material.

Original languageEnglish
Pages (from-to)934-937
Number of pages4
JournalPhysica B: Condensed Matter
StatePublished - 15 Dec 1999
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: 26 Jul 199930 Jul 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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