TY - JOUR
T1 - Dopant Concentration Controls Quasi-Static Electrostrictive Strain Response of Ceria Ceramics
AU - Varenik, Maxim
AU - Nino, Juan Claudio
AU - Wachtel, Ellen
AU - Kim, Sangtae
AU - Yeheskel, Ori
AU - Yavo, Nimrod
AU - Lubomirsky, Igor
N1 - Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/9/2
Y1 - 2020/9/2
N2 - Electromechanically active ceramic materials, piezoelectrics and electrostrictors, provide the backbone of a variety of consumer technologies. Gd- and Sm-doped ceria are ion conducting ceramics, finding application in fuel cells, oxygen sensors, and, potentially, as memristor materials. While optimal design of ceria-based devices requires a thorough understanding of their mechanical and electromechanical properties, reports of systematic study of the effect of dopant concentration on the electromechanical behavior of ceria-based ceramics are lacking. Here we report the longitudinal electrostriction strain coefficient (M33) of dense RExCe1-xO2-x/2 (x ≤ 0.25) ceramic pellets, where RE = Gd or Sm, measured under ambient conditions as a function of dopant concentration within the frequency range f = 0.15-350 Hz and electric field amplitude E ≤ 0.5 MV/m. For >100 Hz, all ceramic pellets tested, independent of dopant concentration, exhibit longitudinal electrostriction strain coefficient with magnitude on the order of 10-18 m2/V2. The quasi-static (f < 1 Hz) electrostriction strain coefficient for undoped ceria is comparable in magnitude, while introducing 5 mol % Gd or 5 mol % Sm produces an increase in M33 by up to 2 orders of magnitude. For x ≤ 0.1 (Gd)-0.15 (Sm), the Debye-type relaxation time constant (τ) is in the range 60-300 ms. The inverse relationship between dopant concentration and quasi-static electrostrictive strain parallels the anelasticity and ionic conductivity of Gd- and Sm-doped ceria ceramics, indicating that electrostriction is partially governed by ordering of vacancies and changes in local symmetry.
AB - Electromechanically active ceramic materials, piezoelectrics and electrostrictors, provide the backbone of a variety of consumer technologies. Gd- and Sm-doped ceria are ion conducting ceramics, finding application in fuel cells, oxygen sensors, and, potentially, as memristor materials. While optimal design of ceria-based devices requires a thorough understanding of their mechanical and electromechanical properties, reports of systematic study of the effect of dopant concentration on the electromechanical behavior of ceria-based ceramics are lacking. Here we report the longitudinal electrostriction strain coefficient (M33) of dense RExCe1-xO2-x/2 (x ≤ 0.25) ceramic pellets, where RE = Gd or Sm, measured under ambient conditions as a function of dopant concentration within the frequency range f = 0.15-350 Hz and electric field amplitude E ≤ 0.5 MV/m. For >100 Hz, all ceramic pellets tested, independent of dopant concentration, exhibit longitudinal electrostriction strain coefficient with magnitude on the order of 10-18 m2/V2. The quasi-static (f < 1 Hz) electrostriction strain coefficient for undoped ceria is comparable in magnitude, while introducing 5 mol % Gd or 5 mol % Sm produces an increase in M33 by up to 2 orders of magnitude. For x ≤ 0.1 (Gd)-0.15 (Sm), the Debye-type relaxation time constant (τ) is in the range 60-300 ms. The inverse relationship between dopant concentration and quasi-static electrostrictive strain parallels the anelasticity and ionic conductivity of Gd- and Sm-doped ceria ceramics, indicating that electrostriction is partially governed by ordering of vacancies and changes in local symmetry.
KW - anelasticity
KW - doped ceria
KW - elastic moduli
KW - electrostriction
KW - nanoindentation
KW - point defects
KW - primary creep
KW - ultrasonic time of flight
UR - http://www.scopus.com/inward/record.url?scp=85090279883&partnerID=8YFLogxK
U2 - 10.1021/acsami.0c07799
DO - 10.1021/acsami.0c07799
M3 - Article
C2 - 32702965
AN - SCOPUS:85090279883
SN - 1944-8244
VL - 12
SP - 39381
EP - 39387
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 35
ER -