Doping in controlling the type of conductivity in bulk and nanostructured thermoelectric materials

D. Fuks, G. Komisarchik, M. Kaller, Y. Gelbstein

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Doping of materials for thermoelectric applications is widely used nowadays to control the type of conductivity. We report the results of ab-initio calculations aimed at developing the consistent scheme for determining the role of impurities that may change the type of conductivity in two attractive thermoelectric classes of materials. It is demonstrated that alloying of TiNiSn with Cu makes the material of n-type, and alloying with Fe leads to p-type conductivity. Similar calculations for PbTe with small amount of Na substituting for Pb leads to p-type conductivity, while Cl substituting for Te makes PbTe an n-type material. It is shown also that for nano-grained materials the n-type conductivity should be observed. The effect of impurities segregating to the grain boundaries in nano-structured PbTe is also discussed.

Original languageEnglish
Pages (from-to)91-100
Number of pages10
JournalJournal of Solid State Chemistry
Volume240
DOIs
StatePublished - 1 Aug 2016

Keywords

  • Half-Heusler
  • PbTe
  • Thermoelectric

Fingerprint

Dive into the research topics of 'Doping in controlling the type of conductivity in bulk and nanostructured thermoelectric materials'. Together they form a unique fingerprint.

Cite this