Double-exchange mechanisms for Mn-doped III-V ferromagnetic semiconductors

P. M. Krstajić, F. M. Peeters, V. A. Ivanov, V. Fleurov, K. Kikoin

Research output: Contribution to journalArticlepeer-review

118 Scopus citations

Abstract

A microscopic model of indirect exchange interaction between transition metal impurities in dilute magnetic semiconductors (DMS) is proposed. The hybridization of the impurity d-electrons with the heavy hole band states is mainly responsible for the exchange of electrons between the impurities, whereas the Hund rule for the electron occupation of the impurity d-shells makes it spin selective. The model is applied to such systems as n-type (Ga,Mn)N and p-type (Ga,Mn)As, p-type (Ga,Mn)P. In n-type DMS with Mn2+/3+ impurities the exchange mechanism is rather close to the kinematic exchange proposed by Zener for mixed-valence Mn ions. In p-type DMS ferromagnetism is governed by the kinematic mechanism involving the kinetic energy gain of the heavy hole carriers caused by their hybridization with 3d electrons of Mn 2+ impurities. Using the molecular field approximation, the Curie temperatures TC are calculated for several systems as functions of the impurity and hole concentrations. Comparison with the available experimental data shows a good agreement.

Original languageEnglish
Article number195215
Pages (from-to)1-16
Number of pages16
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number19
DOIs
StatePublished - 1 Nov 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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