Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Muhammad Y. Bashouti, Kasra Sardashti, Juergen Ristein, Silke H. Christiansen

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is

Original languageEnglish
Pages (from-to)11877-11881
Number of pages5
JournalPhysical Chemistry Chemical Physics
Volume14
Issue number34
DOIs
StatePublished - 14 Sep 2012
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (all)
  • Physical and Theoretical Chemistry

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