Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Muhammad Y. Bashouti; Kasra Sardashti; Juergen Ristein; Silke H. Christiansen

doi:10.1039/c2cp41709j

Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Muhammad Y. Bashouti, Kasra Sardashti, Juergen Ristein, Silke H. Christiansen

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is

Original language	English
Pages (from-to)	11877-11881
Number of pages	5
Journal	Physical Chemistry Chemical Physics
Volume	14
Issue number	34
DOIs	https://doi.org/10.1039/c2cp41709j
State	Published - 14 Sep 2012
Externally published	Yes

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General Physics and Astronomy
Physical and Theoretical Chemistry

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AU - Ristein, Juergen

AU - Christiansen, Silke H.

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AB - Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is

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Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Abstract

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