Abstract
The pattern of change in material properties under irradiation depends both on the conditions of irradiation and on the films' initial state. In the present paper the effect of low energy (E = 4 keV) ion bombardment on the electrical properties of CrSiNi films, having different histories, is considered. The films were fabricated with the use of flash thermal evaporation under residual pressures of 2 × 10-3 and 9 × 10-3 Pa and evaporation times of 40-50 and 140-160 s. Some of the films before irradiation were annealed at a temperature of 623 K for 2 h. After annealing, the temperature coefficient of resistance (TCR) of the films shifts to the region of positive values, and the resistance weakly decreased or increased. After irradiation, the resistance of both type of initial film decreased, but the character of the resistance change of films annealed and irradiated after annealing depended on the conditions of deposition. The TCR of annealed films after irradiation shifted to the region of negative values. After storage, the resistivity of the films increased and the absolute value of the TCR decreased. A qualitative explanation of results is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 40-44 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 213 |
| Issue number | 1 |
| DOIs | |
| State | Published - 29 May 1992 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry