Abstract
The combination N(0)I2 (N(0)-electronic density of states at the Fermi level, I2-electron-phonon coupling constant) is calculated in the tight-binding approximation for the δ2 band of V3Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found that I2 is almost insensitive to changes in the interchain coupling, and that a significant increase in N(0)I2 of this model can be achieved only for low occupation numbers of the δ2 band.
| Original language | English |
|---|---|
| Pages (from-to) | 119-123 |
| Number of pages | 5 |
| Journal | Zeitschrift fur Physik B-Condensed Matter |
| Volume | 42 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Jan 1981 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
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