Effect of high density of states in the presence of interchain coupling on the transition temperature

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Abstract

The combination N(0)I2 (N(0)-electronic density of states at the Fermi level, I2-electron-phonon coupling constant) is calculated in the tight-binding approximation for the δ2 band of V3Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found that I2 is almost insensitive to changes in the interchain coupling, and that a significant increase in N(0)I2 of this model can be achieved only for low occupation numbers of the δ2 band.

Original languageEnglish
Pages (from-to)119-123
Number of pages5
JournalZeitschrift für Physik B Condensed Matter
Volume42
Issue number2
DOIs
StatePublished - 1 Jan 1981
Externally publishedYes

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