Abstract
The effect of ion energy (1.5 to 6.0 keV; 30 keV) and substrate temperature (295 to 673°K) on the structure and electrophysical properties of 37% Cr-53% Si-10% Ni alloy thin films under irradiation is investigated. It is shown that radiation-stimulated crystallization of thin films with a surface resistivity estimated to 500 Ω/□ is more efficient when bombarded with ion energy of 5 keV than with ion energy of 30 keV. The temperature rise at irradiation accelerates crystallization; processes and shifts the temperature coefficient of resistance (TCR) to the positive range. Stability of induced variations is increased with the temperature rise at irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 77-82 |
| Number of pages | 6 |
| Journal | The International journal for hybrid microelectronics |
| Volume | 14 |
| Issue number | 3 |
| State | Published - 1 Sep 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Engineering