Effect of irradiation modes on the properties of thin film resistors

M. G. Abraizov, M. I. Abtaizova, G. M. Prokypets, I. A. Chaikovskii

Research output: Contribution to journalArticlepeer-review


The effect of ion energy (1.5 to 6.0 keV; 30 keV) and substrate temperature (295 to 673°K) on the structure and electrophysical properties of 37% Cr-53% Si-10% Ni alloy thin films under irradiation is investigated. It is shown that radiation-stimulated crystallization of thin films with a surface resistivity estimated to 500 Ω/□ is more efficient when bombarded with ion energy of 5 keV than with ion energy of 30 keV. The temperature rise at irradiation accelerates crystallization; processes and shifts the temperature coefficient of resistance (TCR) to the positive range. Stability of induced variations is increased with the temperature rise at irradiation.

Original languageEnglish
Pages (from-to)77-82
Number of pages6
JournalThe International journal for hybrid microelectronics
Issue number3
StatePublished - 1 Sep 1991
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering


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