Abstract
Femtosecond laser processing of hydrogenated amorphous silicon is a perspective method for thin film solar cells production. It allows to make local crystallization and surface texturing of the films which results in the enhancement of their light absorption and stability of parameters. Thickness of modified material depends strongly on a laser wavelength. However laser wavelength affects also other properties of the film. Therefore here we study structure, surface morphology and photoelectric properties of hydrogenated amorphous silicon films treated by femtosecond laser pulses of different photon energies, namely above, around and below the mobility gap of amorphous silicon.
Original language | English |
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Pages (from-to) | 728-733 |
Number of pages | 6 |
Journal | Journal of Nanoelectronics and Optoelectronics |
Volume | 9 |
Issue number | 6 |
DOIs | |
State | Published - 1 Mar 2015 |
Externally published | Yes |
Keywords
- Absorption
- Amorphous Silicon
- Femtosecond Laser
- Laser Crystallisation
- Nanocrystalline Silicon
- Photoconductivity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering