Effect of laser wavelength on structure and photoelectric properties of a-Si:H films crystallized by femtosecond laser pulses

M. V. Khenkin, D. V. Amasev, A. O. Dudnik, A. V. Emelyanov, P. A. Forsh, A. G. Kazanskii, R. Drevinskas, M. Beresna, P. Kazansky

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Femtosecond laser processing of hydrogenated amorphous silicon is a perspective method for thin film solar cells production. It allows to make local crystallization and surface texturing of the films which results in the enhancement of their light absorption and stability of parameters. Thickness of modified material depends strongly on a laser wavelength. However laser wavelength affects also other properties of the film. Therefore here we study structure, surface morphology and photoelectric properties of hydrogenated amorphous silicon films treated by femtosecond laser pulses of different photon energies, namely above, around and below the mobility gap of amorphous silicon.

Original languageEnglish
Pages (from-to)728-733
Number of pages6
JournalJournal of Nanoelectronics and Optoelectronics
Volume9
Issue number6
DOIs
StatePublished - 1 Mar 2015
Externally publishedYes

Keywords

  • Absorption
  • Amorphous Silicon
  • Femtosecond Laser
  • Laser Crystallisation
  • Nanocrystalline Silicon
  • Photoconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Effect of laser wavelength on structure and photoelectric properties of a-Si:H films crystallized by femtosecond laser pulses'. Together they form a unique fingerprint.

Cite this