Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field

A. A. Dobrovolsky; T. A. Komissarova; Z. M. Dashevsky; V. A. Kassiyan; B. A. Akimov; L. I. Ryabova; D. R. Khokhlov

doi:10.1134/S1063782609020249

Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field

A. A. Dobrovolsky, T. A. Komissarova, Z. M. Dashevsky, V. A. Kassiyan, B. A. Akimov, L. I. Ryabova, D. R. Khokhlov

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Temperature and frequency dependences of components of complex impedance for nanocrystalline PbTe:In films in the temperature range of 4.2-300 K and the frequency range from 20 Hz to 1 MHz have been studied. The films were deposited onto a cooled glass substrate and then annealed in an oxygen atmosphere at temperatures of 300 and 350°C. The charge-carrier transport in the studied films is controlled by charge transport over inversion channels at the surface of grains and by transitions through barriers at the grain boundaries. Parameters (resistance and capacitance) corresponding to each of above-mentioned mechanisms were determined. Dominant contribution to conductance of the film annealed at 350°C is made by inversion channels. It is shown that the transport of charge carriers over inversion channels in the region of low temperatures is realized by hopping conductivity.

Original language	English
Pages (from-to)	253-256
Number of pages	4
Journal	Semiconductors
Volume	43
Issue number	2
DOIs	https://doi.org/10.1134/S1063782609020249
State	Published - 1 Feb 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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@article{4f03bd5877534360a90455aab688b784,

title = "Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field",

abstract = "Temperature and frequency dependences of components of complex impedance for nanocrystalline PbTe:In films in the temperature range of 4.2-300 K and the frequency range from 20 Hz to 1 MHz have been studied. The films were deposited onto a cooled glass substrate and then annealed in an oxygen atmosphere at temperatures of 300 and 350°C. The charge-carrier transport in the studied films is controlled by charge transport over inversion channels at the surface of grains and by transitions through barriers at the grain boundaries. Parameters (resistance and capacitance) corresponding to each of above-mentioned mechanisms were determined. Dominant contribution to conductance of the film annealed at 350°C is made by inversion channels. It is shown that the transport of charge carriers over inversion channels in the region of low temperatures is realized by hopping conductivity.",

author = "Dobrovolsky, {A. A.} and Komissarova, {T. A.} and Dashevsky, {Z. M.} and Kassiyan, {V. A.} and Akimov, {B. A.} and Ryabova, {L. I.} and Khokhlov, {D. R.}",

note = "Funding Information: ACKNOWLEDGMENTS This study was supported in part by the Russian Foundation for Basic Research, project nos. 07-02-01406, 08-02-00306, and 08-02-90104.",

year = "2009",

month = feb,

day = "1",

doi = "10.1134/S1063782609020249",

language = "English",

volume = "43",

pages = "253--256",

journal = "Semiconductors",

issn = "1063-7826",

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TY - JOUR

T1 - Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field

AU - Dobrovolsky, A. A.

AU - Komissarova, T. A.

AU - Dashevsky, Z. M.

AU - Kassiyan, V. A.

AU - Akimov, B. A.

AU - Ryabova, L. I.

AU - Khokhlov, D. R.

N1 - Funding Information: ACKNOWLEDGMENTS This study was supported in part by the Russian Foundation for Basic Research, project nos. 07-02-01406, 08-02-00306, and 08-02-90104.

PY - 2009/2/1

Y1 - 2009/2/1

N2 - Temperature and frequency dependences of components of complex impedance for nanocrystalline PbTe:In films in the temperature range of 4.2-300 K and the frequency range from 20 Hz to 1 MHz have been studied. The films were deposited onto a cooled glass substrate and then annealed in an oxygen atmosphere at temperatures of 300 and 350°C. The charge-carrier transport in the studied films is controlled by charge transport over inversion channels at the surface of grains and by transitions through barriers at the grain boundaries. Parameters (resistance and capacitance) corresponding to each of above-mentioned mechanisms were determined. Dominant contribution to conductance of the film annealed at 350°C is made by inversion channels. It is shown that the transport of charge carriers over inversion channels in the region of low temperatures is realized by hopping conductivity.

AB - Temperature and frequency dependences of components of complex impedance for nanocrystalline PbTe:In films in the temperature range of 4.2-300 K and the frequency range from 20 Hz to 1 MHz have been studied. The films were deposited onto a cooled glass substrate and then annealed in an oxygen atmosphere at temperatures of 300 and 350°C. The charge-carrier transport in the studied films is controlled by charge transport over inversion channels at the surface of grains and by transitions through barriers at the grain boundaries. Parameters (resistance and capacitance) corresponding to each of above-mentioned mechanisms were determined. Dominant contribution to conductance of the film annealed at 350°C is made by inversion channels. It is shown that the transport of charge carriers over inversion channels in the region of low temperatures is realized by hopping conductivity.

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U2 - 10.1134/S1063782609020249

DO - 10.1134/S1063782609020249

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AN - SCOPUS:60249097799

SN - 1063-7826

VL - 43

SP - 253

EP - 256

JO - Semiconductors

JF - Semiconductors

IS - 2

ER -

Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field

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