Effect of Silicon Conductivity and HF/H2O2 Ratio on Morphology of Silicon Nanostructures Obtained via Metal-Assisted Chemical Etching

Jitendra Kumar, Sarang Ingole

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

n-type silicon substrates were etched via metal-assisted chemical etching with silver as catalyst and aqueous solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2) as etchant. The effect of high (5 Ω cm) and low (0.005 Ω cm) substrate resistivity, [HF/(HF + H2O2)] ratio, and etching time on the etched-out features was investigated. For the high-resistivity silicon substrate, the etched-out features had nanowire morphology for [HF/(HF + H2O2)] ratios of 0.70–0.95. However, for the low-resistivity silicon substrate, features with nanowire morphology could be obtained only for [HF/(HF + H2O2)] ratios of 0.90–0.95. The observed morphological changes can be explained based on local etching initiated on the sidewalls of etched-out features by redeposited silver and excess holes.

Original languageEnglish
Pages (from-to)1583-1588
Number of pages6
JournalJournal of Electronic Materials
Volume47
Issue number2
DOIs
StatePublished - 1 Feb 2018
Externally publishedYes

Keywords

  • conductivity
  • etchant
  • metal-assisted chemical etching
  • nanowire
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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