Effect of spontaneous superlattice ordering on the luminescence properties of the MOVPE grown AlGaAs/GaAs (100) heterostructure

Keyphrases

• AlGaAs 100%
• Heterostructure 100%
• Superlattice 100%
• GaAs(100) 100%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 100%
• Luminescence Properties 100%
• Natural Superlattice 100%
• Annealing 66%
• Thermalization 66%
• As-grown 66%
• Excited State Energies 66%
• High Temperature 33%
• Temperature Effect 33%
• Luminescence 33%
• Exciton 33%
• Low Temperature 33%
• Bound States 33%
• Electron-phonon Interaction 33%
• Periodic Structures 33%
• Impurities 33%
• Non-radial 33%
• Photoluminescence 33%
• Epilayer 33%
• Operational Temperature 33%
• Thermal Quenching 33%
• Thermal Activation Energy 33%
• Periodic Modulation 33%
• Enhanced Photoluminescence 33%
• Thermal Escape 33%
• Excitonic Transition 33%
• Temperature Stability 33%
• Phonon Energy 33%
• Ordered Sample 33%
• Two-oscillator Model 33%
• Interface Quality 33%
• Modified Arrhenius Equation 33%
• Temperature-dependent Photoluminescence Spectroscopy 33%
• Band Gap Reduction 33%

Material Science

• Luminescence 100%
• Gallium Arsenide 100%
• Heterojunction 100%
• Aluminium Gallium Arsenide 100%
• Superlattice 100%
• Photoluminescence 60%
• Activation Energy 20%
• Linewidth 20%
• Periodic Structure 20%
• Epilayers 20%