TY - JOUR
T1 - Effect of Substrate Faceting on Epitaxial Lead Sulfide Thin Films Deposited from a Solution onto GaAs(100)
AU - Rudnikov-Keinan, Taissia
AU - Ezersky, Vladimir
AU - Maman, Nitzan
AU - Golan, Yuval
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/7/5
Y1 - 2023/7/5
N2 - Lead sulfide (PbS) thin films were deposited from a solution onto chemically etched GaAs substrates. The substrates were etched using two different chemical etchants, citric acid and phosphorous acid, resulting in different substrate roughness values from 0.4 nm up to 6.2 nm. In both cases, etching resulted in the simultaneous exposure of (100), (111), and (311) microfacets. These different substrate conditions had a strong impact on the morphology and microstructure of the PbS films. This work provides the first reported evidence for PbS thin films deposited onto GaAs(311) microfacets with {113}/⟨110⟩ twinning relations.
AB - Lead sulfide (PbS) thin films were deposited from a solution onto chemically etched GaAs substrates. The substrates were etched using two different chemical etchants, citric acid and phosphorous acid, resulting in different substrate roughness values from 0.4 nm up to 6.2 nm. In both cases, etching resulted in the simultaneous exposure of (100), (111), and (311) microfacets. These different substrate conditions had a strong impact on the morphology and microstructure of the PbS films. This work provides the first reported evidence for PbS thin films deposited onto GaAs(311) microfacets with {113}/⟨110⟩ twinning relations.
UR - https://www.scopus.com/pages/publications/85164359336
U2 - 10.1021/acs.cgd.3c00515
DO - 10.1021/acs.cgd.3c00515
M3 - Article
AN - SCOPUS:85164359336
SN - 1528-7483
VL - 23
SP - 5314
EP - 5322
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 7
ER -