Abstract
Spray deposited kesterite (Cu2ZnSnS4) thin films were annealed in a controlled sulphur environment at 500°C for one hour. Temperature dependence measurement of the electrical conductivity indicated two types of conduction are present: (i) at low temperatures due to nearest neighbor hooping (NNH) and (ii) at high temperatures due to hole excitation into the conduction. The as deposited films showed both the conduction mechanisms, but on annealing the CZTS film, the conduction takes place only due to hole excitation into the conduction band. The absence of NNH conduction is indicative of the effect of annealing in removing the defect levels which can be important for improving the device performance.
Original language | English |
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Title of host publication | DAE Solid State Physics Symposium 2015 |
Editors | R. Chitra, Shovit Bhattacharya, N. K. Sahoo |
Publisher | American Institute of Physics Inc. |
ISBN (Electronic) | 9780735413788 |
DOIs | |
State | Published - 23 May 2016 |
Externally published | Yes |
Event | 60th DAE Solid State Physics Symposium 2015 - Noida, Uttar Pradesh, India Duration: 21 Dec 2015 → 25 Dec 2015 |
Publication series
Name | AIP Conference Proceedings |
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Volume | 1731 |
ISSN (Print) | 0094-243X |
ISSN (Electronic) | 1551-7616 |
Conference
Conference | 60th DAE Solid State Physics Symposium 2015 |
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Country/Territory | India |
City | Noida, Uttar Pradesh |
Period | 21/12/15 → 25/12/15 |
Keywords
- Kesterite Spray process
- activation energy and conductivity
ASJC Scopus subject areas
- General Physics and Astronomy