Effect of sulphurisation on the activation energy of spray deposited kesterite (Cu2ZnSnS4) films

Sanjay Kumar Swami, Neha Chaturvedi, Anuj Kumar, Viresh Dutta

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Spray deposited kesterite (Cu2ZnSnS4) thin films were annealed in a controlled sulphur environment at 500°C for one hour. Temperature dependence measurement of the electrical conductivity indicated two types of conduction are present: (i) at low temperatures due to nearest neighbor hooping (NNH) and (ii) at high temperatures due to hole excitation into the conduction. The as deposited films showed both the conduction mechanisms, but on annealing the CZTS film, the conduction takes place only due to hole excitation into the conduction band. The absence of NNH conduction is indicative of the effect of annealing in removing the defect levels which can be important for improving the device performance.

Original languageEnglish
Title of host publicationDAE Solid State Physics Symposium 2015
EditorsR. Chitra, Shovit Bhattacharya, N. K. Sahoo
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735413788
DOIs
StatePublished - 23 May 2016
Externally publishedYes
Event60th DAE Solid State Physics Symposium 2015 - Noida, Uttar Pradesh, India
Duration: 21 Dec 201525 Dec 2015

Publication series

NameAIP Conference Proceedings
Volume1731
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference60th DAE Solid State Physics Symposium 2015
Country/TerritoryIndia
CityNoida, Uttar Pradesh
Period21/12/1525/12/15

Keywords

  • Kesterite Spray process
  • activation energy and conductivity

ASJC Scopus subject areas

  • General Physics and Astronomy

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