The role of band structure in the photovoltaic effect is examined. Photovoltage is predicted to be sensitive to Van Hove singularities. This prediction is verified experimentally. Spectra of GaAs, GaP, and GaN at above-band-gap photon energies are compared with calculated band structure showing that band features, such as conduction band valleys and valence band peaks, have a clear manifestation in photovoltage spectra, for both direct and indirect transitions. This effect facilitates a band structure probe. This probe reveals experimental evidence on the 2H-GaN valence band structure.
|Number of pages
|Physical Review B - Condensed Matter and Materials Physics
|Published - 15 Oct 2002
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics