Effect of Van Hove singularities on the photovoltage spectra of semiconductors

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The role of band structure in the photovoltaic effect is examined. Photovoltage is predicted to be sensitive to Van Hove singularities. This prediction is verified experimentally. Spectra of GaAs, GaP, and GaN at above-band-gap photon energies are compared with calculated band structure showing that band features, such as conduction band valleys and valence band peaks, have a clear manifestation in photovoltage spectra, for both direct and indirect transitions. This effect facilitates a band structure probe. This probe reveals experimental evidence on the 2H-GaN valence band structure.

Original languageEnglish
Article number165214
Pages (from-to)165214-1-165214-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number16
DOIs
StatePublished - 15 Oct 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Effect of Van Hove singularities on the photovoltage spectra of semiconductors'. Together they form a unique fingerprint.

Cite this