Effects of strain-induced defects on excess carrier lifetime and ambipolar diffusion in nipi-doped In0.2Ga0.8As/GaAs MQWs

H. T. Lin, D. H. Rich, A. Larsson

Research output: Contribution to journalConference articlepeer-review

Abstract

The effects of strain-induced defects on excess carrier lifetime and transport in a nipi-doped In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure were examined with a new method called electron beam-induced absorption modulation (EBIA) in which the kinetics of carrier transport and recombination are examined with a high-spatial, -spectral and -temporal resolution. The excess carrier lifetime and ambipolar diffusion were found to be reduced by factors of approx.1013 and approx.103 compared to theoretical values, respectively, and this is attributed to the presence of strain-induced defects. The MQW excitonic absorption coefficient sensitively depends on the carrier density in the QWs, as a result of screening of the electron-hole (e-h) Coulombic interaction. Likewise, ambipolar diffusion is found to depend on the excess carrier density in a nonlinear fashion, as a result of the e-h plasma-induced changes in the local depletion widths in the vicinity of structural defects.

Original languageEnglish
Pages (from-to)275-280
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume379
DOIs
StatePublished - 1 Jan 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 17 Apr 199520 Apr 1995

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