Abstract
A silicon light emitting device was designed and realized utilizing a standard 2-μm industrial CMOS technology design and processing procedure. The device and its associated driving circuitry were integrated in a CMOS integrated circuit and can interface with a multimode optical fiber. The device delivers 8 nW of optical power (450-850 nm wavelength) per 20 μm diameter of chip area at 4.0 V and 5 mA. The device emits light by means of a surface assisted Zener breakdown process that occurs laterally between concentrically arranged highly doped n+ rings and a p+ centroid, which are all coplanarly arranged with an optically transparent Si-SiO2 interface. Theoretical and experimental determinations with capacitances and series resistances indicate that the device has an intrinsic high-frequency operating capability into the near gigahertz range.
Original language | English |
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Pages (from-to) | 614-617 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 20 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering