Electric and ferro-electric behaviour of polymer-coated graphene-oxide thin film

Sekhar C. Ray; Susanta Kumar Bhunia; Arindam Saha; Nikhil R. Jana

doi:10.1016/j.phpro.2013.07.046

Electric and ferro-electric behaviour of polymer-coated graphene-oxide thin film

Sekhar C. Ray, Susanta Kumar Bhunia, Arindam Saha, Nikhil R. Jana

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Graphene oxide (GO) is prepared by the conventional Hummer's method and subsequently coated with polymaleic anhydride-alt-1-octadecene polymer (P-GO). Both GO and P-GO thin films are deposited on silicon substrate by dropcasting followed by air drying. Raman Spectroscopy, voltage - current (I-V) and polarization - electric field (P-E) measurements are used to study the micro-structural, electrical and ferroelectric behaviors of GO and P-GO thin films. The voltage - current (I-V) measurement shows that the synthesized GO and P-GO behaves like semiconducting and conducting materials respectively and are consistence with the results obtained from Raman spectroscopy measurement. The polarization - electric field (P-E) measurements shows that the polarization behavior is similar to lossy capacitor response with the combined effects of capacitor and resistor.

Original language	English
Pages (from-to)	62-70
Number of pages	9
Journal	Physics Procedia
Volume	46
DOIs	https://doi.org/10.1016/j.phpro.2013.07.046
State	Published - 1 Jan 2013
Externally published	Yes
Event	19th European Conference on Chemical Vapor Deposition, EuroCVD 2013 - Varna, Bulgaria Duration: 1 Sep 2013 → 6 Sep 2013

Keywords

Graphene oxide
Polarization
Polymer coated graphene oxide

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/j.phpro.2013.07.046

Cite this

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title = "Electric and ferro-electric behaviour of polymer-coated graphene-oxide thin film",

abstract = "Graphene oxide (GO) is prepared by the conventional Hummer's method and subsequently coated with polymaleic anhydride-alt-1-octadecene polymer (P-GO). Both GO and P-GO thin films are deposited on silicon substrate by dropcasting followed by air drying. Raman Spectroscopy, voltage - current (I-V) and polarization - electric field (P-E) measurements are used to study the micro-structural, electrical and ferroelectric behaviors of GO and P-GO thin films. The voltage - current (I-V) measurement shows that the synthesized GO and P-GO behaves like semiconducting and conducting materials respectively and are consistence with the results obtained from Raman spectroscopy measurement. The polarization - electric field (P-E) measurements shows that the polarization behavior is similar to lossy capacitor response with the combined effects of capacitor and resistor.",

keywords = "Graphene oxide, Polarization, Polymer coated graphene oxide",

author = "Ray, {Sekhar C.} and Bhunia, {Susanta Kumar} and Arindam Saha and Jana, {Nikhil R.}",

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doi = "10.1016/j.phpro.2013.07.046",

language = "English",

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journal = "Physics Procedia",

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TY - JOUR

T1 - Electric and ferro-electric behaviour of polymer-coated graphene-oxide thin film

AU - Ray, Sekhar C.

AU - Bhunia, Susanta Kumar

AU - Saha, Arindam

AU - Jana, Nikhil R.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Graphene oxide (GO) is prepared by the conventional Hummer's method and subsequently coated with polymaleic anhydride-alt-1-octadecene polymer (P-GO). Both GO and P-GO thin films are deposited on silicon substrate by dropcasting followed by air drying. Raman Spectroscopy, voltage - current (I-V) and polarization - electric field (P-E) measurements are used to study the micro-structural, electrical and ferroelectric behaviors of GO and P-GO thin films. The voltage - current (I-V) measurement shows that the synthesized GO and P-GO behaves like semiconducting and conducting materials respectively and are consistence with the results obtained from Raman spectroscopy measurement. The polarization - electric field (P-E) measurements shows that the polarization behavior is similar to lossy capacitor response with the combined effects of capacitor and resistor.

AB - Graphene oxide (GO) is prepared by the conventional Hummer's method and subsequently coated with polymaleic anhydride-alt-1-octadecene polymer (P-GO). Both GO and P-GO thin films are deposited on silicon substrate by dropcasting followed by air drying. Raman Spectroscopy, voltage - current (I-V) and polarization - electric field (P-E) measurements are used to study the micro-structural, electrical and ferroelectric behaviors of GO and P-GO thin films. The voltage - current (I-V) measurement shows that the synthesized GO and P-GO behaves like semiconducting and conducting materials respectively and are consistence with the results obtained from Raman spectroscopy measurement. The polarization - electric field (P-E) measurements shows that the polarization behavior is similar to lossy capacitor response with the combined effects of capacitor and resistor.

KW - Graphene oxide

KW - Polarization

KW - Polymer coated graphene oxide

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DO - 10.1016/j.phpro.2013.07.046

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SN - 1875-3884

VL - 46

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EP - 70

JO - Physics Procedia

JF - Physics Procedia

T2 - 19th European Conference on Chemical Vapor Deposition, EuroCVD 2013

Y2 - 1 September 2013 through 6 September 2013

ER -

Electric and ferro-electric behaviour of polymer-coated graphene-oxide thin film

Abstract

Keywords

ASJC Scopus subject areas

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