Electrical Activity of Grain Boundaries in Shaped Grown Silicon

A. Fedotov, B. Evtodyi, L. Fionova, Yu Ilyashuk, E. Katz, L. Polyak

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Structure (by SEM, X‐ray, profilometry), recombination activity (by EBIC), and carrier transport properties (by conductivity, Hall effect, mobility of carriers) are investigated in boron doped hexahedral thin‐walled crystals of silicon, grown by the EFG‐process (modification of Stepanov method). All grain boundaries (GBs) can be divided into special (Σ 3, 9), near coincidence and highly deviated (Σ 3, 9, 13), and general (nonspecial) GBs. Special GBs are inactive relative to both, minority and majority carriers. Near coincidence GBs are active to minority, but inactive to majority carriers. General GBs and highly deviated ones from special orientations are very active to both, minority and majority carriers. Representative classification of GBs activity is explained on the basis of the qualitative phenomenological model suggested.

Original languageEnglish
Pages (from-to)523-534
Number of pages12
Journalphysica status solidi (a)
Issue number2
StatePublished - 1 Jan 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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